DFG, cooperation with Universität Kassel, Prof. Dr. Bernd Witzigmann
Vertical device geometries have been proven to be extremely useful in power electronics, such as silicon based IGBTs and CoolMOSTM. Due to its high break down field, GaN is widely interested for its potential application in power electronics with intermediate voltage range (20-1200 V). So far, the challenge of high quality bulk substrate limits the development of bulk-GaN based vertical electronics. Thus, 3D GaN nanowire based vertical power electronics can be an alternative and probably efficient approach, as it make large-area growth on foreign substrate possible without strain issues.
The DFG project of "3D concept for gallium nitride electronics" aims at exploration and development of central process and device strategies for a future vertical GaN electronic technology, utilizing GaN nanowires. The TU Braunschweig project program is fabricating GaN nanowires through selective area MOVPE growth, developing new processing paradigms for designed vertical transistors and performing electrical analysis of device properties. The Universität Kassel program is developing simulation models (TCAD software) for both DC and AC device operation, analyzing measurement results and exploring novel vertical device architectures.
Figure 1:
Schematic of a wet-etched GaN nanowire-based vertical transistor.
Kontakt:
Prof. Andreas Waag
Institute of Semiconductor Technology (IHT)
Technische Universität Braunschweig
Tel.: +49-(0)531/391-3774
E-Mail: a.waag@tu-bs.de
Dr.-Ing. Hutomo Suryo Wasisto
Institute of Semiconductor Technology (IHT)
Technische Universität Braunschweig
Tel.: +49-(0)531/391-3800
E-Mail: h.wasisto@tu-bs.de