The BMBF project PlaN B is addressing a novel technique to produce III/V semiconductors. Pulsed Sputter Deposition (PSD) promises a faster and more effective way towards future LED`s. The expected features are low growth temperatures and various material combinations.
Nowadays the mainly used production technology for LED`s is metal organic chemical vapor deposition (MOCVD). This is a sophisticated technology which cannot be scaled up in an easy way and thus is strongly limiting the potential cost reduction for future LED production. The project is focused on a PSD process which can produce LED`s even in a large scale with limited efforts. The process to be developed in Plan B enables the growth of compound semiconductors at an wide temperature range, but typically at lower temperature than commonly used by MOCVD. Therefore, e.g., new temperature sensitive substrates and InGaN quantum wells with a high indium content enabling efficient red emission will be addressed.
Contact:
Prof. Andreas Waag
Institute of Semiconductor Technology (IHT)
Technische Universität Braunschweig
Phone: +49-(0)531/391-3774
Email: a.waag@tu-bs.de