Contents: crystal structure analysis, crystal defects, epitaxiel layers, microscopy (optical, electrons, microprobes), conductivity, carrier concentration and mobility, optical absorption, deep levels, minority carrier lifetime, metal semiconductor junctions, oxide layers, device parameters.
Examination: oral
Lecture notes: Copies of the transparancies will be provided during the lecture.
Will be held: each SS
Contact person: apl. Prof. Dr. rer. nat. E. Peiner / N. N.